2SD1805G-E

2SD1805: 双极晶体管，20V，5A, 低饱和压，NPN 单 TP/TP-FA

- 双极 BJT - 单 NPN 20 V 5 A 120MHz 1 W 通孔 TP

得捷:
TRANS NPN 20V 5A TP

立创商城:
2SD1805G-E

艾睿:
The three terminals of this NPN 2SD1805G-E GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT NPN 20V 5A 3-Pin3+Tab TP Bulk

Verical:
Trans GP BJT NPN 20V 5A 1000mW 3-Pin3+Tab IPAK Bag

罗切斯特:
Trans GP BJT NPN 20V 5A 3-Pin3+Tab TP Bulk

Win Source:
TRANS NPN 20V 5A TP