VISHAY TSTA7100 红外发射器, 5 °, TO-18, 100 mA, 1.4 V, 600 ns
The is a 875nm Infrared Emitting Diode in GaAlAs technology with lens.
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Hermetically sealed
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High reliability
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High radiant power
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High radiant intensity
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ϕ = ±5° Angle of half intensity
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Low forward voltage
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Suitable for high pulse current operation
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Good spectral matching with Si photodetectors