射频金属氧化物半导体场效应RF MOSFET晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
Overview
The AFM906N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
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## Features
* Characterized for operation from 136 to 941 MHz
* Unmatched input and output allowing wide frequency range utilization
* Integrated ESD protection
* Integrated stability enhancements
* Wideband — full power across the band
* Exceptional thermal performance
* Extreme ruggedness
* High linearity for: TETRA, SSB
* RoHS compliant
**Typical Applications**
* Output stage VHF band handheld radio
* Output stage UHF band handheld radio
* Output stage for 700-800 MHz handheld radio
* Generic 6 W driver for ISM and broadcast final stage transistors
## Features RF Performance Tables
### Wideband Performance
In 440-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW\---|---|---|---|---
440-5201,2| 0.16| 16.2| 62.0| 6.5
### Narrowband Performance
7.5 Vdc, IDQ = 100mA, TA = 25°C, CW\---|---|---|---
5203| 20.3| 70.8| 6.8
### Load Mismatch/Ruggedness
**Frequency
MHz\---|---|---|---|---|---
5203 | CW | > 65:1 at all Phase Angles | 21
3 dB Overdrive | 10.8 | No Device Degradation
1\\. Measured in 440-520 MHz broadband reference circuit.
2\\. The values shown are the minimum measured performance numbers across the indicated frequency range.
3\\. Measured in 520 MHz narrowband production test fixture.