ZXTN25012EFLTA

双极晶体管 - 双极结型晶体管BJT NPN 12V HG Trans.

- 双极 BJT - 单 NPN 260MHz 表面贴装型 SOT-23-3

立创商城:
NPN 12V 2A

得捷:
TRANS NPN 12V 2A SOT23-3

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN 12V HG Trans.

艾睿:
The NPN ZXTN25012EFLTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V.

Allied Electronics:
Trans, NPN, Transistor, GP, 12V 2A SOT23

安富利:
Trans GP BJT NPN 12V 2A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 12V 2A 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 12V 2A 350mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN 12V 2A SOT23-3

DeviceMart:
TRANS NPN HI GAIN LP 12V SOT23-3