FDS6676AS_NL

30V N沟道的PowerTrench剖SyncFET 30V N-Channel PowerTrench㈢ SyncFET

General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSONand low gate charge. The FDS6676AS includes an integrated Schottky diode using ’s monolithic SyncFET technology.

Features

• 14.5 A, 30 V. RDSON max= 6.0 mΩ @ VGS = 10 V

                    RDSON max= 7.25 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge 45nC typical

• High performance trench technology for extremely low RDSON and fast switching

• High power and current handling capability

Applications

• DC/DC converter

• Low side notebook