PDTB123YT

NXP  PDTB123YT  单晶体管 双极, BRT, PNP, 50 V, 250 mW, 50 mA, 70 hFE

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -100mA/-0.1A 基极输入电阻R1 Input ResistanceR1| 2.2KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 0.22 直流电流增益hFE DC Current GainhFE| 70 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 0.25W/250mW Description & Applications| Features • PNP 500 mA, 50 V resistor-equipped transistors • Built-in bias resistors n Reduces component count • Simplifies circuit design n Reduces pick and place costs • 500 mA output current capability n ±10 % resistor ratio tolerance Applications • Digital application in automotive and industrial segments • Cost-saving alternative for BC807 series in digital applications • Controlling IC inputs • Switching loads 描述与应用| 特点 •PNP500毫安，50 V电阻配备 •内置偏置电阻Ñ减少了元件数量 •简化电路设计n减少取放成本 •500 mA的输出电流能力n±10％电阻比例容差 应用 •数字应用在汽车和工业领域 •节省成本的替代BC807系列数字应用 •控制IC输入开关负载