M5M51008DFP-70H

M5M51008DFP-70H概述

1048576 - BIT ( 131072 -字×8位)的CMOS静态RAM 1048576-BIT131072-WORD BY 8-BITCMOS STATIC RAM

DESCRIPTION

The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS

technology. The use of thin film transistor TFT load cells and CMOS periphery result in a high density and low power static RAM.

They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount deviceSMD. Two types of devices are available.

M5M51008DVPnormal lead bend type package, M5M51008DRVreverse lead bend type package.Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES

Directly TTL compatible : All inputs and outputs

Easy memory expansion and power down by S1,S2

Data hold on +2V power supply

Three-state outputs : OR - tie capability

OE prevents data contention in the I/O bus

Common data I/O

Package

   M5M51008DFP  ············ 32pin  525mil  SOP

   M5M51008DVP,RV ············ 32pin  8 X 20 mm2  TSOP

   M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION

Small capacity memory units

M5M51008DFP-70H数据文档
型号 品牌 下载
M5M51008DFP-70H

Mitsubishi 三菱

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M5M51008DVP-70HIST

Renesas Electronics 瑞萨电子

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M5M51008DFP-55H#ST

Renesas Electronics 瑞萨电子

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M5M51008DFP-55HI

Renesas Electronics 瑞萨电子

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M5M51008DFP-55HIBT

Renesas Electronics 瑞萨电子

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M5M51008DFP-70H#BT

Renesas Electronics 瑞萨电子

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M5M51008DVP-70H#BT

Renesas Electronics 瑞萨电子

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M5M5256DFP-70LL

Renesas Electronics 瑞萨电子

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M5M51008CP-70H

Mitsubishi 三菱

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M5M54R08AJ-12

Mitsubishi 三菱

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M5M51008DVP-70H

Renesas Electronics 瑞萨电子

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