SI4900DY-T1-GE3数据手册PDF_SI4900DY-T1-GE3中文资料-锐单商城

SI4900DY-T1-GE3概述

VISHAY SI4900DY-T1-GE3 双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V

The is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for LCD TV CCFL inverter applications.

欧时:
### 双 N 通道 MOSFET，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

艾睿:
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R

Verical:
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R

Newark:
# VISHAY SI4900DY-T1-GE3 MOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V

SI4900DY-T1-GE3数据文档