STB14NM50N

STMICROELECTRONICS  STB14NM50N  晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V

N 通道 MDmesh™，500V，STMicroelectronics

得捷:
MOSFET N-CH 500V 12A D2PAK

欧时:
STMicroelectronics MDmesh 系列 N沟道 MOSFET 晶体管 STB14NM50N, 12 A, Vds=500 V, 3引脚 TO-263封装

贸泽:
MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II

e络盟:
STMICROELECTRONICS  STB14NM50N  晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V

艾睿:
Compared to traditional transistors, STB14NM50N power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 90000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 500V 12A 3-Pin2+Tab D2PAK T/R

富昌:
STB14NM50N 系列 N 沟道 550 V 0.32 Ohm MDMesh II 功率 Mosfet 表面贴装 - D2PAK

Verical:
Trans MOSFET N-CH 500V 12A 3-Pin2+Tab D2PAK T/R

儒卓力:
**N-CH 500V 12A 320mOhm TO263-3 **

力源芯城:
500V,12A,N沟道MOSFET

DeviceMart:
MOSFET N-CH 500V 12A D2PAK

Win Source:
MOSFET N-CH 500V 12A D2PAK