IXDN602SITR

IXDN602SITR概述

低边 IGBT MOSFET 灌:2A 拉:2A

低端 栅极驱动器 IC 非反相 8-SOIC-EP


欧时:
IC GATE DRVR LOW-SIDE 8SOIC


得捷:
IC GATE DRVR LOW-SIDE 8SOIC


立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A


艾睿:
Transistors are never going away, implement this IXDN602SITR power driver by Ixys Corporation in order to help turn on and off the transistor. This device has a maximum propagation delay time of 60 ns. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.


Verical:
Driver 2A 2-OUT Low Side Non-Inv 8-Pin SOIC EP T/R


Win Source:
IC GATE DRVR LOW-SIDE 8SOIC / Low-Side Gate Driver IC Non-Inverting 8-SOIC-EP


IXDN602SITR数据文档
型号 品牌 下载
IXDN602SITR

IXYS Semiconductor

下载
IXDN509SIAT/R

IXYS Semiconductor

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IXDN514D1T/R

IXYS Semiconductor

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IXDN514SIAT/R

IXYS Semiconductor

下载
IXDN604SI

IXYS Semiconductor

下载
IXDN602SIA

IXYS Semiconductor

下载
IXDN609SI

IXYS Semiconductor

下载
IXDN630CI

IXYS Semiconductor

下载
IXDN630YI

IXYS Semiconductor

下载
IXDN602PI

IXYS Semiconductor

下载
IXDN604SIATR

IXYS Semiconductor

下载

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