64Mb 512K x 32Bit x 4 banks SDRAM, LVTTL, 166MHz
GENERAL DESCRIPTION
The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency 2 & 3
-. Burst length 1, 2, 4, 8 & Full page
-. Burst type Sequential & Interleave
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period4K Cycle
型号 | 品牌 | 下载 |
---|---|---|
K4S643232H-TC60 | Samsung 三星 | 下载 |
K4S641632H-TC60 | Samsung 三星 | 下载 |
K4S641632H-UC60 | Samsung 三星 | 下载 |
K4S641632H-TC75 | Samsung 三星 | 下载 |
K4S643232C-TC70 | Samsung 三星 | 下载 |
K4S643232E-TC60 | Samsung 三星 | 下载 |
K4S643232F-TC60 | Samsung 三星 | 下载 |
K4S643232H-UC60 | Samsung 三星 | 下载 |
K4S643232E-TC70 | Samsung 三星 | 下载 |
K4S640832H-UC75 | Samsung 三星 | 下载 |
K4S641632H-UC75 | Samsung 三星 | 下载 |