PSMN1R4-40YLD

NXP  PSMN1R4-40YLD  晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00112 ohm, 10 V, 1.7 V

The is a N-channel enhancement-mode logic level gate drive MOSFET using advanced TrenchMOS® Superjunction technology. It is designed and qualified for high performance power switching applications.

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NextPower-S3 technology delivers superfast switching with soft recovery

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Low QRR, QG and QGD for high system efficiency and low EMI designs

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Schottky-plus body-diode, gives soft switching without the associated high IDSS leakage

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Optimised for 4.5V gate drive utilising NextPower-S3 Superjunction technology

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High reliability LFPAK package, copper-clip, solder die attach and qualified to 175°C

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Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints

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Low parasitic inductance and resistance

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-55 to 175°C Junction temperature range