MUN5230T1G

偏置电阻晶体管 Bias Resistor Transistor

- 双极 BJT - 单，预偏置 NPN - 预偏压 表面贴装型 SC-70-3（SOT323）

得捷:
TRANS PREBIAS NPN 202MW SC70-3

立创商城:
MUN5230T1G

艾睿:
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN MUN5230T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 3@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R