P沟道逻辑电平的PowerTrench MOSFET P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
• -8.8 A, -30 V. RDSON = 0.020 Ω @ VGS = -10 V
RDSON = 0.035 Ω @ VGS = -4.5 V
• Extended VGSS range ±25V for battery applications.
• Low gate charge 19nC typical.
• Fast switching speed.
• High performance trench technology for extremely low RDSON.
• High power and current handling capability.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SI4835DY | Fairchild 飞兆/仙童 | 下载 |
| SI4827-A10-CS | Silicon Labs 芯科 | 下载 |
| SI4825-A10-CS | Silicon Labs 芯科 | 下载 |
| SI4836-A10-GS | Silicon Labs 芯科 | 下载 |
| SI4831-B30-GU | Silicon Labs 芯科 | 下载 |
| SI4820-A10-CU | Silicon Labs 芯科 | 下载 |
| SI4840DY | Vishay Semiconductor 威世 | 下载 |
| SI4844-B20-GU | Silicon Labs 芯科 | 下载 |
| SI4840-A10-GU | Silicon Labs 芯科 | 下载 |
| SI4830-A20-GU | Silicon Labs 芯科 | 下载 |
| SI4827-A10-CSR | Silicon Labs 芯科 | 下载 |