AISC-1008F-1R2G-T数据手册PDF_AISC-1008F-1R2G-T中文资料-锐单商城

AISC-1008F-1R2G-T概述

1.2uH ±2% 编带

1.2 µH 无屏蔽鼓芯，绕线式器 650 mA 800 毫欧最大 1008（2520 公制）

得捷:
FIXED IND 1.2UH 650MA 800MOHM SM

立创商城:
1.2uH ±2%

艾睿:
Inductor RF Chip Wirewound 1.2uH 2% 7.9MHz 37Q-Factor Ferrite 650mA 800mOhm DCR 1008 T/R

安富利:
Ind Chip Unshielded Wirewound 1.2uH 2% 7.9MHz 48Q-Factor Ferrite 650mA 1008 T/R

Verical:
Inductor RF Chip Wirewound 1.2uH 2% 7.9MHz 37Q-Factor Ferrite 650mA 800mOhm DCR 1008 T/R

Win Source:
FIXED IND 1.2UH 650MA 800MOHM SM / 1.2 µH Unshielded Drum Core, Wirewound Inductor 650 mA 800mOhm Max 1008 2520 Metric

AISC-1008F-1R2G-T数据文档