MUBW25-12A7

Trans IGBT Module N-CH 1200V 50A 225000mW 24Pin

This secure and fast infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 225000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a hex configuration. This IGBT driver board has an operating temperature range of -40 °C to 125 °C.

得捷:
IGBT MODULE 1200V 50A 225W E2

艾睿:
This secure and fast MUBW25-12A7 infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 225000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a hex configuration. This IGBT driver board has an operating temperature range of -40 °C to 125 °C.

Verical:
Trans IGBT Module N-CH 1200V 50A 225000mW 24-Pin