IPD30N06S2L13ATMA1数据手册PDF_IPD30N06S2L13ATMA1中文资料-锐单商城

IPD30N06S2L13ATMA1概述

INFINEON IPD30N06S2L13ATMA1 晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V

The IPD30N06S2L-13 is a N-channel logic level enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.

.: AEC-Q101 qualified

.: MSL1 up to 260°C peak reflow

.: Green device

.: 100% Avalanche tested

.: Highest current capability

.: World"s lowest RDS at 55V on in planar technology

.: Optimized total gate charge enables smaller driver output stages

IPD30N06S2L13ATMA1详细参数

IPD30N06S2L13ATMA1数据文档

型号	品牌	下载
IPD30N06S2L13ATMA1	Infineon 英飞凌	下载
IPD30N06S2L-13	Infineon 英飞凌	下载
IPD30N06S2L-23	Infineon 英飞凌	下载
IPD30N08S2L-21	Infineon 英飞凌	下载
IPD30N10S3L-34	Infineon 英飞凌	下载
IPD35N10S3L-26	Infineon 英飞凌	下载
IPD30N03S4L-09	Infineon 英飞凌	下载
IPD30N06S2-15	Infineon 英飞凌	下载
IPD30N03S4L-14	Infineon 英飞凌	下载
IPD30N06S4L23ATMA2	Infineon 英飞凌	下载
IPD350N06LGBTMA1	Infineon 英飞凌	下载