SI4966DY-T1-E3数据手册PDF_SI4966DY-T1-E3中文资料-锐单商城

SI4966DY-T1-E3概述

MOSFET, Power; Dual N-Ch; VDSS 20V; RDSON 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1

**Features:

* Halogen-Free According to IEC 61249-2-21 Definition

* TrenchFET® Power MOSFET: 1.8 V Rated

* Ultra Low On-Resistance for Increased Battery Life

* New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile

* Compliant to RoHS Directive 2002/95/EC

**Applications:

* Load/Power Switching in Portable Devices

贸泽:
MOSFET 20V 7.1A 2W

艾睿:
Trans MOSFET N-CH 20V 7.1A 8-Pin SOIC N T/R

富昌:
双 N 沟道 20 V 0.025 Ohms 表面贴装功率 Mosfet - SOIC-8

Newark:
# VISHAY SI4966DY-T1-E3 Dual MOSFET, Dual N Channel, 7.1 A, 20 V, 0.019 ohm, 4.5 V, 600 mV

SI4966DY-T1-E3数据文档