Trans MOSFET N-CH Si 150V 41A 6Pin Direct-FET SQ T/R
Description
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Lead and Bromide Free
Low Profile <0.7 mm
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
型号 | 品牌 | 下载 |
---|---|---|
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