VT3045CBP-M3/4W

VT3045CBP-M3/4W概述

VISHAY  VT3045CBP-M3/4W  小信号肖特基二极管, 双共阴极, 45 V, 30 A, 570 mV, 200 A, 150 °C

The is a Trench MOS Barrier Schottky Rectifier features low power losses and low forward voltage drop. It has matte tin-plated leads. This device is used in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.

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High efficiency operation
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Solder dip 275°C max. 10s, per JESD 22-B106
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TJ 200°C Maximum in solar bypass mode application
VT3045CBP-M3/4W数据文档
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VT3045CBP-M3/4W

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