XN0F26100L

特点•NPN硅外延平面型•两个元素纳入一个封装中（内置电阻的晶体管）•减少安装面积和装配成本的一半

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 30V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 20V 集电极连续输出电流IC Collector CurrentIC| 600mA Q1基极输入电阻R1 Input ResistanceR1| 3.3KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| Q1电阻比R1/R2 Q1 Resistance Ratio| Q2基极输入电阻R1 Input ResistanceR1| 3.3KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| Q2电阻比R1/R2 Q2 Resistance Ratio| 直流电流增益hFE DC Current GainhFE| 100~600 截止频率fT Transtion FrequencyfT| 200MHz 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • silicon NPN epitaxial planar type • two elements incorporated into one package transistors with built-in resistor • reduction of the mounting area and assembly cost by one half 描述与应用| 特点 •NPN硅外延平面型 •两个元素纳入一个封装中（内置电阻的） •减少安装面积和装配成本的一半