BSD235CH6327XTSA1

N & P 沟道 ±20 V 1200/350 mΩ OptiMOS 2 小信号 晶体管-SOT-363

OptiMOS™2 功率 MOSFET 系列

Infineon

.

* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N/P-CH 20V SOT363

欧时:
Infineon OptiMOS 2 系列 双 Si N/P沟道 MOSFET BSD235CH6327XTSA1, 530 mA，950 mA, Vds=20 V, 6引脚

e络盟:
双路场效应管, MOSFET, BRT, 互补N与P沟道, 20 V, 950 mA, 0.266 ohm, SOT-363, 表面安装

艾睿:
Make an effective common source amplifier using this BSD235CH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes optimos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N/P-CH 20V 0.95A/0.53A 6-Pin SOT-363 T/R

Chip1Stop:
Trans MOSFET N/P-CH 20V 0.95A/0.53A Automotive 6-Pin SOT-363 T/R

TME:
Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W

Verical:
Trans MOSFET N/P-CH 20V 0.95A/0.53A Automotive 6-Pin SOT-363 T/R

Newark:
MOSFET, N & P CH, 20V, 0.95A, SOT-363-6

Win Source:
MOSFET N/P-CH 20V SOT363