SMUN2211T1G

数字晶体管（ BRT ） R1 = 10千欧， R2 = 10千？ Digital Transistors BRT R1 = 10 k, R2 = 10 k

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 230 mW 表面贴装型 SC-59

得捷:
TRANS PREBIAS NPN 50V 100MA SC59

立创商城:
SMUN2211T1G

欧时:
ON Semiconductor, SMUN2211T1G

贸泽:
Bipolar Transistors - Pre-Biased SS SC59 BR XSTR NPN SPCL

e络盟:
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

艾睿:
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN SMUN2211T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R