CAT93C86VI-GT3

CAT93C86VI-GT3概述

ON SEMICONDUCTOR  CAT93C86VI-GT3  EEPROM, 16 Kbit, 2K x 8位 / 1K x 16位, 3 MHz, Microwire, SOIC, 8 引脚

The is a 16kB MICROWIRE serial CMOS Electrically Erasable Programmable Read-Only Memory EEPROM which is configured as either registers of 16-bit ORG pin at VCC or 8-bit ORG pin at GND. Each register can be written or read serially by using the DI or DO pin. The CAT93C86 is manufactured using Catalysts advanced CMOS EEPROM floating gate technology. The device is designed to endure 1000000 program/erase cycles and has data retention of 100 years.

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High speed operation - 3MHz
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1.8 to 5.5V Supply voltage range
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Low power CMOS technology
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Self-timed write cycle with auto-clear
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Hardware and software write protection
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Power-up inadvertent write protection
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Sequential read
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Program enable PE pin
CAT93C86VI-GT3数据文档
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CAT93C86VI-GT3

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