VI20120S-E3/4W数据手册PDF_VI20120S-E3/4W中文资料-锐单商城

VI20120S-E3/4W概述

高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.50 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 for TO-220AB, ITO-220AB, and TO-262AA package

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.

VI20120S-E3/4W数据文档