2STP535FP

2STP535FP概述

NPN功率达林顿晶体管 NPN power Darlington transistor

Higher current yields within your circuit is what you will get with STMicroelectronics" NPN Darlington transistor. This product"s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@3A@4 V|200@8A@4V. It has a maximum collector emitter saturation voltage of 2@6mA@3A|2.5@80mA@8A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 37000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 180 V and a maximum emitter base voltage of 5 V.

2STP535FP数据文档
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2STP535FP

ST Microelectronics 意法半导体

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