50A02SS-TL-E

单晶体管 双极, PNP, -50 V, 690 MHz, 200 mW, -400 mA, 200 hFE

* Large current capacity * Low collector-to-emitter saturation voltage resistance : RCEsat typ=210mΩ [IC=0.5A, IB=50mA] * Ultrasmall package facilitates miniaturization in end products * Small ON-resistance Ron

立创商城:
50A02SS-TL-E

得捷:
TRANS PNP 50V 0.4A 3SSFP

e络盟:
单晶体管 双极, PNP, -50 V, 690 MHz, 200 mW, -400 mA, 200 hFE

艾睿:
ON Semiconductor has the solution to your circuit&s;s high-voltage requirements with their PNP 50A02SS-TL-E general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 50 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 50V 0.4A 3-Pin SSFP T/R

Verical:
Trans GP BJT PNP 50V 0.4A 3-Pin SSFP T/R