Trans IGBT Chip N-CH 2500V 170A 780000mW 3Pin3+Tab PLUS 247
This powerful and secure IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 780000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
得捷:
IGBT 2500V 170A 780W PLUS247
艾睿:
Trans IGBT Chip N-CH 2.5KV 170A 3-Pin3+Tab PLUS 247
Chip1Stop:
Trans IGBT Chip N-CH 2.5KV 170A 3-Pin3+Tab PLUS 247
DeviceMart:
IGBT 2500V 170A 780W PLUS247
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