Single N- Channel 55V 110W 48NC Hexfet Power Mosfet Through Hole - I-Pak
VDSS= 55V
RDSon= 0.027Ω
ID= 42A
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount IRLR2905
Straight Lead IRLU2905
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
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