IXKR25N80C

IXYS SEMICONDUCTOR  IXKR25N80C  功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V

The is a CoolMOS™ N-channel enhancement-mode Power MOSFET features avalanche rated for unclamped inductive switching UIS and low ON-resistance.

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ISOPLUS247™ package with DCB base

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Electrical isolation towards the heat sink

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Low coupling capacitance to the heat sink for reduced EMI

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High power dissipation

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High temperature cycling capability of chip on DCB

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JEDEC TO-247AD compatible

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Easy clip assembly

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Fast CoolMOS™ power MOSFET 3rd generation

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High blocking capability

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Low thermal resistance due to reduced chip thickness

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Enhanced total power density

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Low RDS ON

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High VDSS