BGA735N16

BGA735N16概述

高线性度三频的LTE / UMTS LNA ( 2600/2300/2100 ,一千八百分之一千九百, 900/800/700 MHz的) High Linearity Tri-Band LTE/UMTS LNA 2600/2300/2100, 1900/1800, 900/800/700 MHz

Description:

The is a highly flexible, high linearity tri-band 2600/2300/2100, 1900/1800, 900/800/700 MHz low noise amplifier MMIC for worldwide use. Based on ’s proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network.

Summary of Features:

.
Gain: 16 17 / -7.5 dB in high / low gain mode all bands
.
Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode800 MHz / 1900 MHz / 2100 MHz
.
Supply current: 3.4 4.0 / 0.65 mA in high / low gain mode all bands
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Standby mode < 2 μA typ.
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Output internally matched to 50 Ω
.
Inputs pre-matched to 50 Ω
.
2kV HBM ESD protection
.
Low external component count
.
Small leadless TSNP-16-1 package 2.3 x 2.3 x 0.39 mm
.
Pb-free RoHS compliant package
BGA735N16数据文档
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