SOT-223 N-CH 415V 0.005A
Description
The is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.
Features
• Low on resistance 8 ohms
• Breakdown voltage 415V minimum
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card PCMCIA Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™ Data Access Arrangement DAA
• Telecom
| 型号 | 品牌 | 下载 |
|---|---|---|
| CPC5603C | IXYS Semiconductor | 下载 |
| CPC5902G | IXYS Semiconductor | 下载 |
| CPC5903GS | IXYS Semiconductor | 下载 |
| CPC5902GS | IXYS Semiconductor | 下载 |
| CPC5602C | IXYS Semiconductor | 下载 |
| CPC5601DTR | IXYS Semiconductor | 下载 |
| CPC5903G | IXYS Semiconductor | 下载 |
| CPC5903GSTR | IXYS Semiconductor | 下载 |
| CPC5902GSTR | IXYS Semiconductor | 下载 |
| CPC5002GSTR | IXYS Semiconductor | 下载 |
| CPC5001G | IXYS Semiconductor | 下载 |