BSP129H6327XTSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 240V 350MA SOT223-4

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BSP129H6327XTSA1, 350 mA, Vds=240 V, 3针+焊片 SOT-223封装

e络盟:
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, -1.4 V

艾睿:
Create an effective common drain amplifier using this BSP129H6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in depletion mode.

安富利:
Trans MOSFET N-CH 240V 0.35A 4-Pin SOT-223 T/R

Chip1Stop:
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223

Verical:
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin3+Tab SOT-223 T/R

Win Source:
MOSFET N-CH 240V 350MA SOT223