MUN2112T1G

偏置电阻晶体管 Bias Resistor Transistor

- 双极 BJT - 单，预偏置 PNP - 预偏压 50 V 100 mA 230 mW 表面贴装型 SC-59

得捷:
TRANS PREBIAS PNP 50V 100MA SC59

艾睿:
Thanks to ON Semiconductor&s;s PNP MUN2112T1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SC-59 T/R

Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-59 T/R

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-59 T/R

Win Source:
TRANS PREBIAS PNP 230MW SC59