RFM04U6PTE12L,F

射频金属氧化物半导体场效应RF MOSFET晶体管 Radio-Freq PwrMOSFET N-Ch 2A 7W 16V

This RF amplifier from is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 7000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This RF power MOSFET has a minimum operating temperature of -45 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in depletion mode.