IRLR3410TRR

IRLR3410TRR N沟道MOSFET 1.7A TO-252/D-PAK marking/标记 LR3410 逻辑电平操作/内置过温关断电路

HEXFET® Power MOSFET Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU series is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead IRLU3410 Advanced Process Technology Fast Switching Fully Avalanche Rated