FDFS2P753Z

FAIRCHILD SEMICONDUCTOR  FDFS2P753Z  晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V

The is an integrated P-channel MOSFET and Schottky Diode combines the exceptional performance of "s PowerTrench® technology with a very low forward voltage drop Schottky barrier rectifier. It is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low ON-state resistance. The independently connected Schottky diode allows its use in a variety of DC-to-DC converter topologies.

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Schottky and MOSFET incorporated into single power surface-mount SO-8 package

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Electrically independent Schottky and MOSFET pin out for design flexibility