JAN2N3737

JAN2N3737概述

Trans GP BJT NPN 40V 1.5A 3Pin TO-46

If your circuit"s specifications require a device that can handle high levels of voltage, "s NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

JAN2N3737数据文档
型号 品牌 下载
JAN2N3737

Microsemi 美高森美

下载
JAN2N3019

Microsemi 美高森美

下载
JAN2N2329

Microsemi 美高森美

下载
JAN2N2222A

ON Semiconductor 安森美

下载
JAN2N2907A

Microsemi 美高森美

下载
JAN2N2904A

Microsemi 美高森美

下载
JAN2N2219A

Microsemi 美高森美

下载
JAN2N3501

Microsemi 美高森美

下载
JAN2N3700

Microsemi 美高森美

下载
JAN2N2905A

ON Semiconductor 安森美

下载
JAN2N2906A

Microsemi 美高森美

下载

锐单商城 - 一站式电子元器件采购平台