DFE252012P-1R0M=P2数据手册PDF_DFE252012P-1R0M=P2中文资料-锐单商城

DFE252012P-1R0M=P2概述

MURATA DFE252012P-1R0M=P2 表面贴装高频电感器, DFE252012P Series, 1 µH, ± 20%, 1008 [2520 公制], 0.042 ohm

1 µH 屏蔽绕线器 4.3 A 42 毫欧最大 1008（2520 公制）

得捷:
FIXED IND 1UH 4.3A 42 MOHM SMD

立创商城:
1uH ±20%

e络盟:
功率电感SMD, 1 µH, 屏蔽, 3.8 A, DFE252012P Series, 1008 [2520 公制]

艾睿:
Inductor Power Shielded Wirewound 1uH 20% 1MHz Metal 3.2A 0.042Ohm DCR 1008 T/R

安富利:
Ind Metal Alloy Shielded 1uH 20% 1MHz Powdered Iron 3.2A 1008 T/R

Verical:
Inductor Power Shielded Wirewound 1uH 20% 1MHz Metal 3.2A 0.042Ohm DCR 1008 T/R

Newark:
# MURATA DFE252012P-1R0M=P2 INDUCTOR, SHIELDED, 1UH, 20%, 3.8A, 1008

DFE252012P-1R0M=P2数据文档