IPB80N08S2L07ATMA1

INFINEON  IPB80N08S2L07ATMA1  晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0063 ohm, 4.5 V, 1.6 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

得捷:
MOSFET N-CH 75V 80A TO263-3

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET IPB80N08S2L07ATMA1, 80 A, Vds=75 V, 3引脚 D2PAK TO-263封装

立创商城:
N沟道 75V 80A

贸泽:
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

e络盟:
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0063 ohm, 4.5 V, 1.6 V

艾睿:
As an alternative to traditional transistors, the IPB80N08S2L07ATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3

Verical:
Trans MOSFET N-CH 75V 80A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB80N08S2L07ATMA1  MOSFET Transistor, N Channel, 80 A, 75 V, 0.0063 ohm, 4.5 V, 1.6 V