UP0121M00L

UP0121M00L NPN+NPN复合三极管 50V 100mA HEF=80 R1=2.2KΩ R2=47KΩ SOT-563 标记EM 用于开关/数字电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V 集电极连续输出电流IC Collector CurrentIC | 100mA Q1基极输入电阻R1 Input ResistanceR1 | 2.2KΩ Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ Q1电阻比R1/R2 Q1 Resistance Ratio | 0.047 Q2基极输入电阻R1 Input ResistanceR1 | 2.2KΩ Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ Q2电阻比R1/R2 Q2 Resistance Ratio | 0.047 直流电流增益hFE DC Current GainhFE | 80 截止频率fT Transtion FrequencyfT | 150MHz 耗散功率Pc Power Dissipation | 125mW Description & Applications | Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package transistors with built-in resistor • Reduction of the mounting area and assembly cost by one half. 描述与应用 | 特点 •NPN硅外延平面型 •两个要素纳入一个包（内置电阻） •减少安装面积和汇编一半的费用