Trans GP BJT NPN 80V 10A 3Pin2+Tab D2PAK T/R
Jump-start your electronic circuit design with this versatile NPN GP BJT from STMicroelectronics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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|---|---|---|
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| MJB44H11T4-A | ST Microelectronics 意法半导体 | 下载 |
| MJB45H11T4 | ON Semiconductor 安森美 | 下载 |
| MJB42CG | ON Semiconductor 安森美 | 下载 |