SPA04N60C3XKSA1

INFINEON  SPA04N60C3XKSA1  功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V

CoolMOS™C3 功率 MOSFET

得捷:
MOSFET N-CH 650V 4.5A TO220-FP

欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET SPA04N60C3XKSA1, 4.5 A, Vds=650 V, 3引脚 TO-220FP封装

贸泽:
MOSFET LOW POWER_LEGACY

e络盟:
INFINEON  SPA04N60C3XKSA1  功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V

艾睿:
Compared to traditional transistors, SPA04N60C3XKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 31000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Verical:
Trans MOSFET N-CH 650V 4.5A 3-Pin3+Tab TO-220FP Tube

Win Source:
MOSFET N-CH 650V 4.5A TO220FP