FMH20N60S1

FUJI ELECTRIC  FMH20N60S1  功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

The is a N-channel enhancement-mode power MOSFET with 600VDS drain source voltage. It is suitable for switching application.

e络盟:
晶体管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

Newark:
# FUJI ELECTRIC  FMH20N60S1  Power MOSFET, N Channel, 20 A, 600 V, 0.161 ohm, 10 V, 3 V