Trans IGBT Chip N-CH 600V 80A 200000mW 3Pin3+Tab ISOPLUS 247
IGBT PT 600 V 75 A 200 W 通孔 ISOPLUS247™
得捷:
IGBT 600V 75A 200W ISOPLUS247
艾睿:
The IXGR72N60B3H1 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Verical:
Trans IGBT Chip N-CH 600V 80A 200000mW 3-Pin3+Tab ISOPLUS 247
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGR72N60B3H1 | IXYS Semiconductor | 下载 |
| IXGR40N60CD1 | IXYS Semiconductor | 下载 |
| IXGR50N60B2 | IXYS Semiconductor | 下载 |
| IXGR50N60BD1 | IXYS Semiconductor | 下载 |
| IXGR50N60C2 | IXYS Semiconductor | 下载 |
| IXGR50N60C2D1 | IXYS Semiconductor | 下载 |
| IXGR40N60BD1 | IXYS Semiconductor | 下载 |
| IXGR40N60C2D1 | IXYS Semiconductor | 下载 |
| IXGR24N60B | IXYS Semiconductor | 下载 |
| IXGR50N60B | IXYS Semiconductor | 下载 |
| IXGR24N60C | IXYS Semiconductor | 下载 |