Trans IGBT Chip N-CH 1700V 170A 830000mW 3Pin3+Tab TO-264
Minimize the current at your gate with the IGBT transistor from Ixys Corporation. Its maximum power dissipation is 830000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.
得捷:
IGBT PT 1000V 120A TO-264
艾睿:
Trans IGBT Chip N-CH 1.7KV 170A 3-Pin3+Tab TO-264
Chip1Stop:
Trans IGBT Chip N-CH 1.7KV 170A 3-Pin3+Tab TO-264
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGK100N170 | IXYS Semiconductor | 下载 |
| IXGK50N60B | IXYS Semiconductor | 下载 |
| IXGK60N60C2D1 | IXYS Semiconductor | 下载 |
| IXGK120N60C2 | IXYS Semiconductor | 下载 |
| IXGK60N60 | IXYS Semiconductor | 下载 |
| IXGK60N60B2D1 | IXYS Semiconductor | 下载 |
| IXGK50N60A2U1 | IXYS Semiconductor | 下载 |
| IXGK120N60B | IXYS Semiconductor | 下载 |
| IXGK50N60AU1 | IXYS Semiconductor | 下载 |
| IXGK50N60BD1 | IXYS Semiconductor | 下载 |
| IXGK35N120B | IXYS Semiconductor | 下载 |