SPB17N80C3ATMA1

INFINEON  SPB17N80C3ATMA1  功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V

CoolMOS™C3 功率 MOSFET

得捷:
MOSFET N-CH 800V 17A TO263-3

欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET SPB17N80C3ATMA1, 17 A, Vds=800 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3

e络盟:
晶体管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V

艾睿:
This SPB17N80C3ATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 227000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.

Chip1Stop:
Trans MOSFET N-CH 800V 17A 3-Pin2+Tab TO-263 T/R

Verical:
Trans MOSFET N-CH 800V 17A 3-Pin2+Tab TO-263 T/R

Newark:
# INFINEON  SPB17N80C3ATMA1  Power MOSFET, N Channel, 17 A, 800 V, 0.25 ohm, 10 V, 3 V