IGP20N60H3

INFINEON  IGP20N60H3  单晶体管, IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-220, 3 引脚

The is a High Speed IGBT in Trench and field-stop technology. The high speed device is used to reduce the size of the active components 25 to 70kHz. "s high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.

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Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz

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Low switching losses for high efficiency

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Fast switching behaviour with low EMI emissions

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Optimized diode for target applications, meaning further improvement in switching losses

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Low gate resistor selection possible down to 5R whilst maintaining excellent switching behaviour

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Short-circuit capability

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Excellent performance

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Low switching and conduction losses

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Very good EMI behaviour

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Small gate resistor for reduced delay time and voltage overshoot

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Best-in-class IGBT efficiency and EMI behaviour

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Packaged with and without freewheeling diode for increased design freedom

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Green product

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Halogen-free