1HP04CH-TL-W

1HP04CH-TL-W 编带

This Power MOSFET is produced using ’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

Features |   | Benefits

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Pb-Free, Halogen Free and RoHS compliance

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Environmental consideration

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High Voltage 100V

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Usuful for LiB circuit of 48V for storage

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High Speed Switching and Low Loss

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Correspond to required characteristic of motor circuit

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4V drive

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ESD Diode-Protected Gate

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