PMBFJ177,215

P 通道 JFET，NXP### JFET 晶体管一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。

P 通道 JFET，

### JFET

一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。

得捷:
JFET P-CH 30V SOT23

欧时:
### P 通道 JFET，NXP### JFET 晶体管一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。

贸泽:
JFET JFET P-CH 30V 0.8mA

艾睿:
This PMBFJ177,215 JFET transistor from NXP Semiconductors is an uni-polar voltage-controlled device that has a very high input electrical resistance. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This junction field effect transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.

Chip1Stop:
Trans JFET P-CH 30V 20mA Si 3-Pin TO-236AB T/R

Verical:
Trans JFET P-CH 30V 20mA Si 3-Pin TO-236AB T/R

Newark:
# NXP  PMBFJ177,215  Bipolar Pre-Biased / Digital Transistor, Brt, SOT-23

RfMW:
PMBFJ177/SOT23/REELLP//

Win Source:
JFET P-CH 30V 0.3W SOT23